?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA15N120FTD rev. c0 fga15n20ftd 1200 v, 15 a field stop trench igbt march 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 1200 v v ges gate to emitter voltage ? 25 v i c collector current @ t c = 25 o c 30 a collector current @ t c = 100 o c 15 a i cm (1) pulsed collector current 45 a i f diode continuous forward current @ t c = 100 o c 15 a i fm diode maximum forward current 90 a p d maximum power dissipation @ t c = 25 o c 220 w maximum power dissipation @ t c = 100 o c 88 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.57 o c / w r ? jc (diode) thermal resistance, junction to case - 2.1 o c / w r ? ja thermal resistance, junction to ambient - 62.5 o c / w g e c to-3pn ge c FGA15N120FTD 1200 v, 15 a field stop trench igbt features ? field stop trench technology ? high speed switching ? low saturation voltage: v ce(sat) = 1. 58 v @ i c = 15 a ? high input impedance ? rohs complaint applications ? induction heating, microwave oven general description using advanced field stop trench technology, fairchild ? ?s 1200v trench igbts offer superior conduction and switching performances for soft switching applications. the device can operate in parallel configuration with exceptional avalanche rug - gedness. this device is desi gned for induction heating and microwave oven.
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA15N120FTD rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGA15N120FTD FGA15N120FTDtu to-3pn - - 30 symbol parameter test conditions min. typ. max. unit ? off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 250 na ? on characteristics v ge(th) g-e threshold voltage i c = 15ma, v ce = v ge 3.5 6 7.5 v v ce(sat) collector to emitter saturation voltage i c = 15a , v ge = 15v - 1.58 2 v i c = 15a , v ge = 15v, t c = 1 25 o c - 1.83 - v ? dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 2350 - pf c oes output capacitance - 70 - pf c res reverse transfer capacitance - 45 - pf ? switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 15a, r g = 15 ? , v ge = 15v, resistive load, t c = 25 o c - 33 - ns t r rise time - 80 - ns t d(off) turn-off delay time - 160 - ns t f fall time - 255 330 ns e on turn-on switching loss - 0.3 - mj e off turn-off switching loss - 0.58 0.74 mj e ts total switching loss - 0.88 - mj t d(on) turn-on delay time v cc = 600v, i c = 15a, r g = 15 ? , v ge = 15v, resistive load, t c = 125 o c - 30 - ns t r rise time - 115 - ns t d(off) turn-off delay time - 170 - ns t f fall time - 390 - ns e on turn-on switching loss - 0.38 - mj e off turn-off switching loss - 0.89 - mj e ts total switching loss - 1.27 - mj q g total gate charge v ce = 600v, i c = 15a, v ge = 15v - 100 - nc q ge gate to emitter charge - 19 - nc q gc gate to collector charge - 45 - nc
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA15N120FTD rev. c0 electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 15a t c = 25 o c - 1.4 1.8 v t c = 125 o c - 1.42 - t rr diode reverse recovery time i es =15a, di/dt = 200a/ ? s t c = 25 o c - 575 - ns t c = 125 o c - 577 - i rr diode peak reverse recovery cyrrent t c = 25 o c - 30 - a t c = 125 o c - 37 - q rr diode reverse recovery charge t c = 25 o c - 8.7 - ? c t c = 125 o c - 10.7 -
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA15N120FTD rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge te mperature at variant current level 024681012 0 30 60 90 120 10v 17v 20v t c = 25 o c 15v 12v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 30 60 90 120 17v 10v 20v t c = 125 o c 15v 12v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0123456 0 20 40 60 80 100 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 2468101214 0 20 40 60 80 100 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 1.2 1.6 2.0 2.4 2.8 30 a 15a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 15a 30a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA15N120FTD rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 15a 30a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 110 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 1 10 100 1000 0.01 0.1 1 10 100 200 dc operation i c max (continuous) i c max (pulse) 1ms 10ms *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 2000 0306090120 0 5 10 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 20406080100 10 100 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 300 0 20406080100 100 1000 2000 70 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] gate resistance gate resistance
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA15N120FTD rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics figure 18. forward characteristics 10 15 20 25 30 10 100 common emitter v ge = 15v, r g = 15 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 600 10 15 20 25 30 10 1000 common emitter v ge = 15v, r g = 15 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 100 10 15 20 25 30 100 1000 10000 common emitter v ge = 15v, r g = 15 ? t c = 25 o c t c = 125 o c e on e off switching loss [ ? j ] collector current, i c [a] 0 20406080100 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 o c t c = 125 o c e on e off switching loss [ ? j ] gate resistance, r g [ ? ] 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 2000 80 0.00.51.01.52.02.5 0.1 1 10 t j = 25 o c 40 t c = 25 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a]
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA15N120FTD rev. c0 typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21.reverse recovery time figure 22 .transient thermal impedance of igbt 5 1015202530 0 10 20 30 40 200a/ ? s di/dt = 100a/ ? s reverse recovery currnet, i rr [a] forward current, i f [a] 5 1015202530 0 2000 4000 6000 8000 10000 12000 14000 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 5 1015202530 200 400 600 800 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA15N120FTD 1200 v, 15 a field stop trench igbt ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA15N120FTD rev. c0 mechanical dimensions to-3pn dimensions in millimeters
FGA15N120FTD 1200v, 15a fi eld stop trench igbt ?2008 fairchild semiconductor corporation 9 www.fairchildsemi.com FGA15N120FTD rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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